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Patents - ELECTRICAL AND ELECTRONIC APPLICATIONS1 2 Category list | January 2006 | | ELECTRICAL AND ELECTRONIC APPLICATIONS |
WO 2005/045918 A1 (05/19/05) Freescale Semiconductor, Inc.
Jawarani D.
ICIDE FORMATION FOR A SEMICONDUCTOR DEVICE
A polysilicon line used e.g. as a gate has an amorphous portion made by implanting particles of relatively large atomic mass, which is used to form a metal silicide having a desirably low sheet resistance. Exemplary metals are cobalt and nickel that can provide the thin lines of below 50 nanometers. An examplary particle for implantation that has sufficient atomic mass is xenon.
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WO 2005/042802 A1 (05/12/05) Siemens AG
Stamm W.
PROTECTIVE LAYER FOR THE PROTECTION OF A COMPONENT AGAINST CORROSION AND OXIDATION AT ELEVATED TEMPERATURES AND COMPONENT
A protective layer against corrosion and oxidation at elevated temperatures and subject to hardly any embrittlement resulting from Cr/Re precipitations is composed of 0.5-2% rhenium, 24-26% cobalt, 15-21% chromium, 9-11.5% aluminum, 0.05-0.7% yttrium and/or other rare earth element, 0-1% ruthenium, the rest being cobalt and/or nickel and related impurities.
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WO 2005/041252 A2 (05/06/05) International Business Machines Corporation
Chen J, Chan K, Huang S, Nowak E.
SPLIT POLY-SiGe/POLY-Si ALLOY GATE STACK
A multi-layered gate electrode stack structure of a field effect transistor device is formed on a silicon nano crystal seed layer on the gate dielectric. The thin SiO2 or SixGeyOz interfacial layer offers little resistance to gate current flow yet effectively blocks upward Ge diffusion during heat treatment to thereby allow silicidation of a subsequently deposited layer of cobalt.
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| February 2005 |
"WO 2004/095594 A1 (11/04/04) Matsushita Electric Industrial Co., Ltd."
"Ono, Y.; Inayama, S.; Miyazaki, Y.; Kajitani, T.; Yotsuhashi, S.; Adachi, H."
"THERMOELECTRICALLY TRANSDUCING MATERIAL, THERMOELECTRIC TRANSDUCER USING THE MATERIAL, AND GENERATING METHOD AND COOLING METHOD USING THE TRANSDUCER"
"An n-type thermoelectrically transducing material comprises a half Heuisler alloy represented by the formula: QR(L1-pZp), wherein Q is a Group 5 element, R is cobalt, rhodium or iridium, L is tin or germanium, Z is indium or antimony, p is 0-0.5. Preferably half Heuisler alloys for the material include NbCo(Sn1-pSbp). "
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WO 2004/097821 A1 (11/11/04) Interaxia AG
"Dippell, T.; Eneva, J.; Häckl, H.; Ryu, H. S.; Verma, S."
"RECORDING MEDIUM FOR AN OPTICAL DATA MEMORY, ESPECIALLY A DVD±R"
"A medium for the recording layer of DVD±Rs, suitable especially for high writing speeds, comprises three components, a cyanine dye, a nickel-diazo complex, and a tetracyanoquinone or a cobalt-diazo complex. Such a mixture fulfills the strict thermal conditions posed by high writing speeds while meeting the optical requirements set for the recording layers of DVD±Rs."
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WO 2004/010498 A3 (12/02/04) Johnson Matthey PLC
"Casci, J. L.; Catchpole, S. J."
OXYGEN GETTER AND METHOD FOR FORMING IT
A2 published (01/29/04)
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"WO 2005/010241 A1 (02/03/05) Mitsui Mining & Smelting Co.,Ltd."
"Higuchi, T.; Sugimoto, A."
"SURFACE-TREATED COPPER FOIL HAVING BLACKENING-TREATED SURFACE, PROCESS FOR PRODUCING THE SURFACE-TREATED COPPER FOIL AND, USING THE SURFACE-TREATED COPPER FOIL, ELECTROMAGNETIC WAVE SHIELDING CONDUCTIVE MESH FOR FRONT PANEL OF PLASMA DISPLAY"
A surface-treated copper foil exhibiting excellent black color which can be worked by the custopmary copper etching process; and a conductive mesh for PDP produced from such a foil. A production process comprises subjecting a glossy surface of copper foil to electrolysis in a black cobalt plating solution containing cobalt sulfate (hexahydrate).
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"WO 2005/034225 A1 (04/14/05) Advanced Micro Devices, Inc."
"Kammler, T.; Wieczorek, K.; Frenkel, A."
A SEMICONDUCTOR DEVICE HAVING A NICKEL/COBALT SILICIDE REGION FORMED IN A SILICON REGION
"The superior characteristics of a buried nickel silicide layer (260A) followed by a cobalt silicide layer (261A) in silicon containing regions, such as a gate electrode of a field effect transistor, of both silicides may provide the potential for further device scaling without unduly compromising the sheet resistance and the contact resistance of scaled silicon circuit features."
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